Chemical Name：Tetraethyl orthosilicate (electronic grade)
Molecular Formula： C8H20O4Si
Molecular Weight： 208.33
CAS No.： 78-10-4
Properties and Reactivity
Electronic grade tetraethyl orthosilicate(TEOS), mainly used in the CVD process of IC wafer manufacturing, the purity requirements are very strict, the purity needs to be more than 8N, and the impurities need to be less than 1 ppb, especially metal ion impurities (Na, K, Mg, Fe, Ca, Al, etc.), metal ions are electroactive impurities. It will reduce the insulation performance of the silicon dioxide thin film layer deposited in the semiconductor device, which will lead to the interconnection of micron-scale circuits, resulting in the scrap of the circuit board. The total cation content and total chlorine content of tetraethoxysilane produced by the direct method are very low, and the conditions of processing tetraethoxysilane into electronic grade are complete.
Note: the above data is for reference only, cannot be as a technical specification.
BOSIL-781 is primarily used as a CVD process in wafer manufacturing. It is used to produce silicon dioxide thin films and is an electronic chemical required for the manufacture of semiconductors, discrete devices and micro-electromechanical systems.
BOSIL-781 is used in the semiconductor industry to produce high quality abrasive particles.
BOSIL-781 can be used as non-chlorine or ultra-low chlorine insulation heat resistant material.